| 1896 |
Graphitization phenomenon of SiC appeared in a patent by E. G. Acheson. This is the first document of this phenomenon. (It is the year when Roentgen
discovered x-ray.) |
| 1965 |
A paper by D. V. Badami was published, in which the x-ray diffraction study of graphite grown by thermal decomposition of SiC was reported. The orientation relation between graphite and the hexagonal SiC (0001) was clarified. |
| 1975 |
A. J. van Bommel et. al. published a paper about the low-energy electron diffraction (LEED)
study of graphite on SiC. The 6√3x6√3R30 reconstructed surface
was firstly reported. |
| 1998 |
Growth process and the conduction band electronic structure of graphene
("graphite monolayer") were revealed in a paper by I. Forbeaux and coworkers. |
| 2000 |
"Very thin layer of graphite" on SiC was directly visualized
by high-resolution transmission electron microscopy (HRTEM) in a paper
by M. Kusunoki et al. |
| 2004 |
Two-dimensional electron gas properties of "ultrathin epitaxial graphite"
were reported by C. Berger et al. This paper is the pioneering work of epitaxial graphene research
and it triggered explosive expansion of this field. |
| 2006 |
The electronic structure of graphene on SiC was revealed by angle-resolved
photoemission spectroscopy (ARPES) which was performed by T. Ohta et al. |
| 2008 |
H. Hibino, et al. succeeded in direct counting the number of graphene layers by
low-energy electron microscopy (LEEM), which is the non-destructive experiment. |
| 2008 |
Homogeneous large-area graphene growth technique was developed by two groups, one is C. Virojanadara, et al. and the other is K. V. Emtsev, et al. Growth in an Ar atmosphere leads to homogeneous graphene. |
| 2009 |
Hydrogen intercalation was performed in order to obtain quasi-freestanding monolayer graphene by C. Riedl and coworkers. The 6√3x6√3R30 buffer layer was converted to
monolayer graphene by hydrogen intercalation. |
| 2010 |
A. Tzalenchuk et al reported a quantum resistance standard based on epitaxial graphene,
which is one of the best graphene applications. |
| 2010 |
Growth mechanism and the interface structure of graphene on SiC was revealed
by the HRTEM observation by W. Norimatsu et al. |
| 2010 |
Y. Qi et al. revealed the atomic structure of the interface buffer layer by
scanning tunneling spectroscopy (STM). |
| 2010 |
Y-M. Lin et al. succeeded in fabrication of 100 GHz transistors. 300 GHz was
achieved later by the same group. |
| 2011 |
Y-M Lin et al. also demonstrated operation of wafer-scale graphene integrated
circuit. |
| 2011 |
Graphene growth on SiC by chemical vapor deposition was reported by W. Strupinski et al. |
| 2012 |
J. Ristein et al. explained the origin of n-type conduction in epitaxial graphene
on SiC and p-type conduction in quasi-freestanding monolayer graphene on
SiC. |
| 2013 |
Repeatable graphene transfer was established by J. Kim et al. |
| 2014 |
Ballistic transport in epitaxial graphene nanoribbons was reported by J. Baringhaus et al. |
| 2014 |
Y-C Lin et al. succeeded in growth of transition metal dichalcogenides on epitaxial graphene on SiC. |
| 2015 |
Indication of superconductivity in epitaxial graphene was obtained by B. M. Ludbrook et al. |
| 2016 |
Z. Y. Al Balushi et al. reported the growth of two-dimensional gallium nitride between
graphene and SiC. |
| And ... |
...Where are we going? |
